 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| PML260SN N-channel TrenchMOS standard level FET Rev. 02 -- 29 May 2006 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a surface-mounted plastic package using TrenchMOS technology. 1.2 Features I Standard level threshold I Very low thermal impedance I Low profile and small footprint I Low on-state resistance 1.3 Applications I Primary side switching I Portable appliances I DC-to-DC converters 1.4 Quick reference data I VDS 200 V I RDSon 294 m I ID 8.8 A I QGD = 4.2 nC (typ) 2. Pinning information Table 1. Pin 1, 2, 3 4 5, 6, 7, 8 Pinning Description source (S) gate (G) drain (D) G Simplified outline 8765 Symbol D 1234 Transparent top view mbb076 S SOT873-1 (HVSON8) Philips Semiconductors PML260SN N-channel TrenchMOS standard level FET 3. Ordering information Table 2. Ordering information Package Name PML260SN HVSON8 Description Version plastic thermal enhanced very thin small outline package; no leads; SOT873-1 8 terminals; body 3.3 x 3.3 x 0.85 mm Type number 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature source current peak source current Tmb = 25 C Tmb = 25 C; pulsed; tp 10 s unclamped inductive load; ID = 3.5 A; tp = 0.05 ms; VDS 200 V; RGS = 50 ; VGS = 10 V; starting at Tj = 25 C Tmb = 25 C; VGS = 10 V; see Figure 2 and 3 Tmb = 100 C; VGS = 10 V; see Figure 2 Tmb = 25 C; pulsed; tp 10 s; see Figure 3 Tmb = 25 C; see Figure 1 Conditions 25 C Tj 150 C Min -55 -55 Max 200 20 8.8 5.5 15 50 +150 +150 8.8 15 22 Unit V V A A A W C C A A mJ Source-drain diode Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy PML260SN_2 (c) Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 02 -- 29 May 2006 2 of 12 Philips Semiconductors PML260SN N-channel TrenchMOS standard level FET 120 Pder (%) 80 03ne36 120 Ider (%) 80 03ne37 40 40 0 0 50 100 150 Tmb (C) 200 0 0 50 100 150 Tmb (C) 200 P tot P der = ----------------------- x 100 % P tot ( 25C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature 102 ID (A) 10 Limit RDSon = VDS / ID ID I der = ------------------- x 100 % I D ( 25C ) Fig 2. Normalized continuous drain current as a function of mounting base temperature 003aab281 tp = 10 s 100 s DC 1 1 ms 10 ms 10-1 10-1 1 10 102 VDS (V) 103 Tmb = 25 C; IDM is single pulse; VGS = 10 V Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PML260SN_2 (c) Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 02 -- 29 May 2006 3 of 12 Philips Semiconductors PML260SN N-channel TrenchMOS standard level FET 5. Thermal characteristics Table 4. Rth(j-mb) Rth(j-a) [1] Thermal characteristics Conditions minimum footprint [1] Symbol Parameter thermal resistance from junction to ambient Min - Typ 60 Max 2.5 - Unit K/W K/W thermal resistance from junction to mounting base see Figure 4 Mounted on a printed-circuit board; vertical in still air. 10 003aab280 Zth(j-mb) (K/W) = 0.5 1 0.2 0.1 0.05 10-1 10-5 0.02 single pulse 10-4 10-3 10-2 10-1 1 tp T t P = tp T tp (s) 10 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration PML260SN_2 (c) Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 02 -- 29 May 2006 4 of 12 Philips Semiconductors PML260SN N-channel TrenchMOS standard level FET 6. Characteristics Table 5. Characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 A; VGS = 0 V Tj = 25 C Tj = -55 C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; see Figure 9 and 10 Tj = 25 C Tj = 150 C Tj = -55 C IDSS drain leakage current VDS = 160 V; VGS = 0 V Tj = 25 C Tj = 150 C IGSS RG RDSon gate leakage current gate resistance drain-source on-state resistance VGS = 20 V; VDS = 0 V f = 1 MHz VGS = 10 V; ID = 2.6 A; see Figure 6 and 8 Tj = 25 C Tj = 150 C VGS = 6 V; ID = 2.5 A Dynamic characteristics QG(tot) QGS QGS1 QGS2 QGD VGS(pl) Ciss Coss Crss td(on) tr td(off) tf VSD trr Qr total gate charge gate-source charge pre-VGS(th) gate-source charge post-VGS(th) gate-source charge gate-drain charge gate-source plateau voltage input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain voltage reverse recovery time recovered charge IS = 3.2 A; VGS = 0 V; see Figure 13 IS = 3.2 A; dIS/dt = -100 A/s; VGS = 0 V; VR = 120 V VDS = 100 V; RL = 100 ; VGS = 10 V; RG = 5.6 VGS = 0 V; VDS = 30 V; f = 1 MHz; see Figure 14 ID = 2.6 A; VDS = 100 V; VGS = 10 V; see Figure 11 and 12 13.3 2.4 1.15 1.25 4.2 4.2 657 74 25 7 11 19 7 0.8 101 267 1.2 nC nC nC nC nC V pF pF pF ns ns ns ns V ns nC 250 550 263 294 647 309 m m m 10 0.6 1 100 100 A A nA 2 1.2 3 4 4.4 V V V 200 178 V V Conditions Min Typ Max Unit Source-drain diode PML260SN_2 (c) Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 02 -- 29 May 2006 5 of 12 Philips Semiconductors PML260SN N-channel TrenchMOS standard level FET 12 VGS (V) = 10 ID (A) 8 003aab063 800 RDSon (m) 600 003aab064 5 3.6 3.8 4 4 400 3.8 4 3.6 3.4 3.2 0 0 1 2 3 4 VDS (V) 5 0 0 4 8 ID (A) 12 200 VGS (V) = 5 10 Tj = 25 C Tj = 25 C Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values 12 ID (A) 003aab065 Fig 6. Drain-source on-state resistance as a function of drain current; typical values 3 03al52 a 8 2 4 Tj = 150 C 25 C 1 0 0 1 2 3 4 VGS (V) 5 0 -60 0 60 120 Tj (C) 180 Tj = 25 C and 150 C; VDS > ID x RDSon R DSon a = ----------------------------R DSon ( 25C ) Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values PML260SN_2 (c) Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 02 -- 29 May 2006 6 of 12 Philips Semiconductors PML260SN N-channel TrenchMOS standard level FET 5 VGS(th) (V) 4 max 03aa32 10-1 ID (A) 10-2 min typ max 03aa35 3 typ 10-3 2 min 10-4 1 10-5 0 -60 0 60 120 Tj (C) 180 10-6 0 2 4 VGS (V) 6 ID = 1 mA; VDS = VGS Tj = 25 C; VDS = 5 V Fig 9. Gate-source threshold voltage as a function of junction temperature 003aab066 Fig 10. Sub-threshold drain current as a function of gate-source voltage 10 VGS (V) 8 VDS ID VGS(pl) 6 4 VGS(th) 2 VGS QGS1 QGS2 QGD QG(tot) 003aaa508 0 0 4 8 12 QG (nC) 16 QGS ID = 2.6 A; VDS = 100 V Fig 11. Gate-source voltage as a function of gate charge; typical values Fig 12. Gate charge waveform definitions PML260SN_2 (c) Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 02 -- 29 May 2006 7 of 12 Philips Semiconductors PML260SN N-channel TrenchMOS standard level FET 12 IS (A) 10 003aab080 103 003aab067 Ciss C (pF) 8 6 102 4 150 C Tj = 25 C Coss 2 Crss 0 0.2 0.4 0.6 0.8 VSD (V) 1 10 10-1 1 10 102 VDS (V) Tj = 25 C and 150 C; VGS = 0 V VGS = 0 V; f = 1 MHz Fig 13. Source current as a function of source-drain voltage; typical values Fig 14. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values PML260SN_2 (c) Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 02 -- 29 May 2006 8 of 12 Philips Semiconductors PML260SN N-channel TrenchMOS standard level FET 7. Package outline HVSON8: plastic thermal enhanced very thin small outline package; no leads; 8 terminals; body 3.3 x 3.3 x 0.85 mm SOT873-1 X D B A terminal 1 index area E A A1 c detail X terminal 1 index area e 1 e1 b 4 C v w M M CAB C y1 C y L1 Eh L2 8 5 Dh 0 1 scale DIMENSIONS (mm are the original dimensions) UNIT mm A max. 1 A1 b c 0.2 D 3.4 3.2 Dh 2.3 2.2 E 3.4 3.2 Eh e e1 L1 L2 v 0.1 w 0.05 y 0.1 y1 0.1 2 mm 0.05 0.35 0.00 0.25 1.68 0.55 0.52 0.65 1.95 1.58 0.45 0.42 REFERENCES OUTLINE VERSION SOT873-1 IEC --- JEDEC --- JEITA --- EUROPEAN PROJECTION ISSUE DATE 05-06-16 05-06-21 Fig 15. Package outline SOT873-1 (HVSON8) PML260SN_2 (c) Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 02 -- 29 May 2006 9 of 12 Philips Semiconductors PML260SN N-channel TrenchMOS standard level FET 8. Revision history Table 6. Revision history Release date 20060529 Data sheet status Product data sheet Change notice Supersedes PML260SN_1 Document ID PML260SN_2 Modifications: PML260SN_1 * The format of this data sheet has been redesigned to comply with the new presentation and information standard of Philips Semiconductors. Preliminary data sheet - 20051222 PML260SN_2 (c) Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 02 -- 29 May 2006 10 of 12 Philips Semiconductors PML260SN N-channel TrenchMOS standard level FET 9. Legal information 9.1 Data sheet status Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.semiconductors.philips.com. 9.2 Definitions Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Philips Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Philips Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. to result in personal injury, death or severe property or environmental damage. Philips Semiconductors accepts no liability for inclusion and/or use of Philips Semiconductors products in such equipment or applications and therefore such inclusion and/or use is for the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- Philips Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.semiconductors.philips.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by Philips Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 9.3 Disclaimers General -- Information in this document is believed to be accurate and reliable. However, Philips Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- Philips Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- Philips Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a Philips Semiconductors product can reasonably be expected 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS -- is a trademark of Koninklijke Philips Electronics N.V. 10. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com PML260SN_2 (c) Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 02 -- 29 May 2006 11 of 12 Philips Semiconductors PML260SN N-channel TrenchMOS standard level FET 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 11 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) Koninklijke Philips Electronics N.V. 2006. All rights reserved. For more information, please visit: http://www.semiconductors.philips.com. For sales office addresses, email to: sales.addresses@www.semiconductors.philips.com. Date of release: 29 May 2006 Document identifier: PML260SN_2 |
Price & Availability of PML260SN
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |